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G Skill Intl F3-2400C11-8GSR 8GB
Samsung M471A2K43CB1-CTD 16GB

G Skill Intl F3-2400C11-8GSR 8GB vs Samsung M471A2K43CB1-CTD 16GB

总分
star star star star star
G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

总分
star star star star star
Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB

差异 规格 评论

差异

G Skill Intl F3-2400C11-8GSR 8GB 需要考虑的原因
G Skill Intl F3-2400C11-8GSR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 35
    左右 3% 更低的延时
  • 更快的读取速度，GB/s
    16.8 left arrow 15.5
    测试中的平均数值
Samsung M471A2K43CB1-CTD 16GB 需要考虑的原因
Samsung M471A2K43CB1-CTD 16GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-2400C11-8GSR 8GB
Samsung M471A2K43CB1-CTD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    34 left arrow 35
  • 读取速度，GB/s
    16.8 left arrow 15.5
  • 写入速度，GB/s
    11.3 left arrow 11.3
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2968 left arrow 2848

G Skill Intl F3-2400C11-8GSR 8GB RAM的比较

G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F3-2400C11-8GXM 8GB

Samsung M471A2K43CB1-CTD 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung M395T2863QZ4-CF76 1GB
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AMD R948G3206U2S 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Samsung M471A2K43CB1-CTD 16GB
Samsung M471A2K43CB1-CTD 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3600C16-8GTZR 8GB
G Skill Intl F4-3600C16-8GTZR 8GB
内存RAM
Kingston HX318C10FK/4 4GB
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Crucial Technology CT8G4DFS8213.M8FB 8GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
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Samsung M393A2G40EB1-CPB 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Patriot Memory (PDP Systems) 3733 C17 Series 8GB
Patriot Memory (PDP Systems) 3733 C17 Series 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
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Avant Technology J641GU42J7240N3 8GB
内存RAM
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Kingston 9905316-106.A02LF 1GB
G Skill Intl F4-3733C17-8GTZKK 8GB
G Skill Intl F4-3733C17-8GTZKK 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology CT16G4SFD8213.C16FBR 16GB
Crucial Technology CT16G4SFD8213.C16FBR 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
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Corsair CMW32GX4M4D3600C18 8GB
内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
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G Skill Intl F4-3400C16-8GTZ 8GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
内存RAM