G Skill Intl F3-2666C12-8GTXD 8GB vs Corsair CMW32GX4M2A2666C16 16GB

总分

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

总分

Corsair CMW32GX4M2A2666C16 16GB

Corsair CMW32GX4M2A2666C16 16GB

差异规格评论

差异

G Skill Intl F3-2666C12-8GTXD 8GB

需要考虑的原因
G Skill Intl F3-2666C12-8GTXD 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 30

左右 7% 更低的延时
更快的读取速度，GB/s

18.2 16.7

测试中的平均数值

Corsair CMW32GX4M2A2666C16 16GB

需要考虑的原因
Corsair CMW32GX4M2A2666C16 16GB

报告一个错误

更快的写入速度，GB/s

13.2 11.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2666C12-8GTXD 8GB

Corsair CMW32GX4M2A2666C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 30
读取速度，GB/s

18.2 16.7
写入速度，GB/s

11.5 13.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3067 3398

RAM Latency Calculator

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Samsung M3 78T2953EZ3-CF7 1GB

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SK Hynix V-GeN D4H4GL26A8TL5 4GB

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SK Hynix HMT41GU7MFR8A-H9 8GB

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Good Wealth Technology Ltd. KETECH 8GB

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Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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Corsair CMU32GX4M2C3333C16 16GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Samsung M471A1K43BB1-CTD 8GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Kingston 9965640-008.A01G 32GB

Kingston 9965640-008.A01G 32GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

G Skill Intl F4-3200C15-16GTZ 16GB

G Skill Intl F4-3200C15-16GTZ 16GB

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Samsung M393A1G40DB1-CRC 8GB

Samsung M393A1G40DB1-CRC 8GB