G Skill Intl F3-2666C12-8GTXD 8GB vs Mushkin 99[2/7/4]198F 8GB

总分

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

总分

Mushkin 99[2/7/4]198F 8GB

Mushkin 99[2/7/4]198F 8GB

差异规格评论

差异

G Skill Intl F3-2666C12-8GTXD 8GB

需要考虑的原因
G Skill Intl F3-2666C12-8GTXD 8GB

报告一个错误

更快的读取速度，GB/s

18.2 12.6

测试中的平均数值
更快的写入速度，GB/s

11.5 8.7

测试中的平均数值

Mushkin 99[2/7/4]198F 8GB

需要考虑的原因
Mushkin 99[2/7/4]198F 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 28

左右 -8% 更低的延时
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2666C12-8GTXD 8GB

Mushkin 99[2/7/4]198F 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 26
读取速度，GB/s

18.2 12.6
写入速度，GB/s

11.5 8.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3067 2257

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Corsair CMU32GX4M2C3000C15 16GB

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Samsung M471B5273EB0-YK0 4GB

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Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Kingston KHX3466C16D4/16GX 16GB

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Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

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Samsung M4 70T2864QZ3-CF7 1GB

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Crucial Technology CT102464BF160B-16F 8GB

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Golden Empire CL16-16-16 D4-3200 4GB

Golden Empire CL16-16-16 D4-3200 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Corsair CMH32GX4M4D3600C18 8GB

Corsair CMH32GX4M4D3600C18 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Corsair CMT64GX4M2C3600C18 32GB

Corsair CMT64GX4M2C3600C18 32GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Crucial Technology BLS8G4D26BFSBK.8FD 8GB

Crucial Technology BLS8G4D26BFSBK.8FD 8GB