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G Skill Intl F3-2800C12-8GTXDG 8GB
Good Wealth Technology Ltd. KETECH 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB vs Good Wealth Technology Ltd. KETECH 8GB

总分
star star star star star
G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

总分
star star star star star
Good Wealth Technology Ltd. KETECH 8GB

Good Wealth Technology Ltd. KETECH 8GB

差异 规格 评论

差异

G Skill Intl F3-2800C12-8GTXDG 8GB 需要考虑的原因
G Skill Intl F3-2800C12-8GTXDG 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 29
    左右 28% 更低的延时
  • 更快的写入速度，GB/s
    12.2 left arrow 11.8
    测试中的平均数值
Good Wealth Technology Ltd. KETECH 8GB 需要考虑的原因
Good Wealth Technology Ltd. KETECH 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.5 left arrow 17.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-2800C12-8GTXDG 8GB
Good Wealth Technology Ltd. KETECH 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    21 left arrow 29
  • 读取速度，GB/s
    17.4 left arrow 17.5
  • 写入速度，GB/s
    12.2 left arrow 11.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3130 left arrow 3392

G Skill Intl F3-2800C12-8GTXDG 8GB RAM的比较

Corsair CMY32GX3M4B2666C11 8GB
Kingston 9905734-102.A00G 32GB

Good Wealth Technology Ltd. KETECH 8GB RAM的比较

Samsung M3 93T5750CZA-CE6 2GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Good Wealth Technology Ltd. KETECH 8GB
Good Wealth Technology Ltd. KETECH 8GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Corsair CM4X16GE2400C14K4 16GB
Corsair CM4X16GE2400C14K4 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
G Skill Intl F4-3466C16-8GTZKW 8GB
G Skill Intl F4-3466C16-8GTZKW 8GB
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Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
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Corsair CM4X4GF2133C13K4 4GB
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Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
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Chun Well Technology Holding Limited MD4U0840180BCW 8GB
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Peak Electronics 256X64M-67E 2GB
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Samsung M474A2K43BB1-CPB 16GB
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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Corsair CMK64GX4M4C3333C16 16GB
内存RAM
Corsair CML8GX3M2A1866C9 4GB
Corsair CML8GX3M2A1866C9 4GB
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Crucial Technology BLE8G4D32BEEAK.K8FB 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
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Corsair CMK32GX4M4B3000C15 8GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
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Apacer Technology GD2.22428S.001 8GB
内存RAM
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Samsung M378B5673FH0-CH9 2GB
Transcend Information TS1GLH64V1H 8GB
Transcend Information TS1GLH64V1H 8GB
内存RAM
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Micron Technology 16JTF25664AZ-1G4F1 2GB
Kingston 9905663-008.A00G 16GB
Kingston 9905663-008.A00G 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
内存RAM