G Skill Intl F3-2800C12-8GTXDG 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB

总分

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB

差异规格评论

差异

G Skill Intl F3-2800C12-8GTXDG 8GB

需要考虑的原因
G Skill Intl F3-2800C12-8GTXDG 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 27

左右 22% 更低的延时
更快的读取速度，GB/s

17.4 15.3

测试中的平均数值
更快的写入速度，GB/s

12.2 11.2

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2800C12-8GTXDG 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

21 27
读取速度，GB/s

17.4 15.3
写入速度，GB/s

12.2 11.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3130 2545

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX1600C9S3L/4G 4GB

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G Skill Intl F4-4400C19-32GTRS 32GB

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Corsair CMR32GX4M4C3333C16 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Samsung M378A1K43BB1-CTD 16GB

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Samsung M393B1K70QB0-CK0 8GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

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Kingston 99U5584-005.A00LF 4GB

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