G Skill Intl F3-2800C12-8GTXDG 8GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

G Skill Intl F3-2800C12-8GTXDG 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

总分

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

差异规格评论

差异

G Skill Intl F3-2800C12-8GTXDG 8GB

需要考虑的原因
G Skill Intl F3-2800C12-8GTXDG 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 35

左右 40% 更低的延时
更快的读取速度，GB/s

17.4 10.5

测试中的平均数值
更快的写入速度，GB/s

12.2 8.1

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2800C12-8GTXDG 8GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

21 35
读取速度，GB/s

17.4 10.5
写入速度，GB/s

12.2 8.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3130 2179

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Samsung V-GeN D4S16GL26A8TL6 16GB

Samsung V-GeN D4S16GL26A8TL6 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Team Group Inc. TEAMGROUP-Ind-2666 8GB

Team Group Inc. TEAMGROUP-Ind-2666 8GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Crucial Technology CT8G4DFS824A.M8FGM 8GB

Crucial Technology CT8G4DFS824A.M8FGM 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

G Skill Intl F4-2666C19-16GIS 16GB

G Skill Intl F4-2666C19-16GIS 16GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F4-4266C19-8GTRS 8GB

G Skill Intl F4-4266C19-8GTRS 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Kingston 9905678-102.A00G 8GB

Kingston 9905678-102.A00G 8GB

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB

Chun Well Technology Holding Limited CL19-20-20 D4-3600

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-4600C18-8GTRS 8GB

G Skill Intl F4-4600C18-8GTRS 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Gloway International (HK) STKD4GAM2400-F 8GB

Gloway International (HK) STKD4GAM2400-F 8GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

SK Hynix HMA82GU6DJR8N-WM 16GB

SK Hynix HMA82GU6DJR8N-WM 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Kingston HP24D4U7S8MD-8 8GB

Kingston HP24D4U7S8MD-8 8GB