G Skill Intl F3-2800C12-8GTXDG 8GB vs Samsung M378A2G43BB3-CWE 16GB

总分

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

总分

Samsung M378A2G43BB3-CWE 16GB

Samsung M378A2G43BB3-CWE 16GB

差异规格评论

差异

G Skill Intl F3-2800C12-8GTXDG 8GB

需要考虑的原因
G Skill Intl F3-2800C12-8GTXDG 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 38

左右 45% 更低的延时
更快的写入速度，GB/s

12.2 10.4

测试中的平均数值

Samsung M378A2G43BB3-CWE 16GB

需要考虑的原因
Samsung M378A2G43BB3-CWE 16GB

报告一个错误

更快的读取速度，GB/s

17.9 17.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2800C12-8GTXDG 8GB

Samsung M378A2G43BB3-CWE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

21 38
读取速度，GB/s

17.4 17.9
写入速度，GB/s

12.2 10.4
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

3130 3030

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A2G43BB3-CWE 16GB

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Crucial Technology CT8G4DFS6266.M4FE 8GB

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PNY Electronics PNY 2GB

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Kingston 9905403-444.A00LF 4GB

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SK Hynix HMA82GU7MFR8N-TF 16GB

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Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

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Kingston 99U5469-045.A00LF 4GB

Lexar Co Limited LD4AU008G-H3200GST 8GB

Lexar Co Limited LD4AU008G-H3200GST 8GB

Samsung M378B5673FH0-CH9 2GB

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A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

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SK Hynix HMT125U6TFR8C-H9 2GB

SK Hynix HMT125U6TFR8C-H9 2GB

SK Hynix HMT325U6BFR8C-H9 2GB

SK Hynix HMT325U6BFR8C-H9 2GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43BB1-CRC 16GB