G Skill Intl F4-3600C19-8GSXWB 8GB vs Crucial Technology CB8GS2666.C8ET 8GB

总分

G Skill Intl F4-3600C19-8GSXWB 8GB

G Skill Intl F4-3600C19-8GSXWB 8GB

总分

Crucial Technology CB8GS2666.C8ET 8GB

Crucial Technology CB8GS2666.C8ET 8GB

差异规格评论

差异

G Skill Intl F4-3600C19-8GSXWB 8GB

需要考虑的原因
G Skill Intl F4-3600C19-8GSXWB 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 39

左右 26% 更低的延时
更快的读取速度，GB/s

19.4 14

测试中的平均数值
更快的写入速度，GB/s

15.8 9.1

测试中的平均数值

Crucial Technology CB8GS2666.C8ET 8GB

需要考虑的原因
Crucial Technology CB8GS2666.C8ET 8GB

报告一个错误

更高的内存带宽，mbps

21300 17000

左右 1.25 更高的带宽

规格

完整的技术规格清单

G Skill Intl F4-3600C19-8GSXWB 8GB

Crucial Technology CB8GS2666.C8ET 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 39
读取速度，GB/s

19.4 14.0
写入速度，GB/s

15.8 9.1
内存带宽，mbps

17000 21300

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3614 2221

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Corsair CMX4GX3M2A1600C9 2GB

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Micron Technology 8ATF1G64HZ-2G6D1 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Samsung M378A1K43DB2-CVF 8GB

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Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

Samsung M471A2K43CB1-CRCR 16GB

Samsung M471A2K43CB1-CRCR 16GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Corsair CMD16GX4M2K4133C19 8GB

Corsair CMD16GX4M2K4133C19 8GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB

Transcend Information JM3200HLB-16G 16GB

Transcend Information JM3200HLB-16G 16GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Essencore Limited IM44GU48N24-FFFHAB 4GB

Essencore Limited IM44GU48N24-FFFHAB 4GB