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G Skill Intl F4-3600C19-8GSXWB 8GB
Maxsun MSD416G26Q3 16GB

G Skill Intl F4-3600C19-8GSXWB 8GB vs Maxsun MSD416G26Q3 16GB

总分
star star star star star
G Skill Intl F4-3600C19-8GSXWB 8GB

G Skill Intl F4-3600C19-8GSXWB 8GB

总分
star star star star star
Maxsun MSD416G26Q3 16GB

Maxsun MSD416G26Q3 16GB

差异 规格 评论

差异

G Skill Intl F4-3600C19-8GSXWB 8GB 需要考虑的原因
G Skill Intl F4-3600C19-8GSXWB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 84
    左右 65% 更低的延时
  • 更快的读取速度，GB/s
    19.4 left arrow 12.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.8 left arrow 7.0
    测试中的平均数值
Maxsun MSD416G26Q3 16GB 需要考虑的原因
Maxsun MSD416G26Q3 16GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25 更高的带宽

规格

完整的技术规格清单
G Skill Intl F4-3600C19-8GSXWB 8GB
Maxsun MSD416G26Q3 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 84
  • 读取速度，GB/s
    19.4 left arrow 12.5
  • 写入速度，GB/s
    15.8 left arrow 7.0
  • 内存带宽，mbps
    17000 left arrow 21300
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3614 left arrow 1486

G Skill Intl F4-3600C19-8GSXWB 8GB RAM的比较

SK Hynix HMA851U6CJR6N-VK 4GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB

Maxsun MSD416G26Q3 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology CT16G4SFD824A.M16FD 16GB
Crucial Technology CT16G4SFD824A.M16FD 16GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMD32GX4M4B2800C14 8GB
Corsair CMD32GX4M4B2800C14 8GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
Corsair CMW32GX4M2C3333C16 16GB
Corsair CMW32GX4M2C3333C16 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
内存RAM
G Skill Intl F4-3600C19-8GSXWB 8GB
G Skill Intl F4-3600C19-8GSXWB 8GB
Maxsun MSD416G26Q3 16GB
Maxsun MSD416G26Q3 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology 11137401 8GB
A-DATA Technology 11137401 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Kingston KHX2400C15/16G 16GB
Kingston KHX2400C15/16G 16GB
内存RAM
Kingston 99U5428-040.A00LF 4GB
Kingston 99U5428-040.A00LF 4GB
Crucial Technology BLT8G4D30BET4K.C8FD 8GB
Crucial Technology BLT8G4D30BET4K.C8FD 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology CT16G4SFD824A.M16FR 16GB
Crucial Technology CT16G4SFD824A.M16FR 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-2800C15-4GTZB 4GB
G Skill Intl F4-2800C15-4GTZB 4GB
内存RAM