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G Skill Intl F4-4000C14-16GTZR 16GB
Kingston MSI24D4S7S8MB-8 8GB
比较
G Skill Intl F4-4000C14-16GTZR 16GB vs Kingston MSI24D4S7S8MB-8 8GB
总分
G Skill Intl F4-4000C14-16GTZR 16GB
总分
Kingston MSI24D4S7S8MB-8 8GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F4-4000C14-16GTZR 16GB
报告一个错误
低于PassMark测试中的延时,ns
29
35
左右 17% 更低的延时
更快的读取速度,GB/s
24
14.5
测试中的平均数值
更快的写入速度,GB/s
20.0
11.1
测试中的平均数值
需要考虑的原因
Kingston MSI24D4S7S8MB-8 8GB
报告一个错误
更高的内存带宽,mbps
19200
17000
左右 1.13 更高的带宽
规格
完整的技术规格清单
G Skill Intl F4-4000C14-16GTZR 16GB
Kingston MSI24D4S7S8MB-8 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
35
读取速度,GB/s
24.0
14.5
写入速度,GB/s
20.0
11.1
内存带宽,mbps
17000
19200
Other
描述
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
4156
2580
G Skill Intl F4-4000C14-16GTZR 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
Kingston MSI24D4S7S8MB-8 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMZ16GX3M2A2400C10 8GB
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
Samsung M471B5173DB0-YK0 4GB
Micron Technology CT4G4DFS8213.8FA11 4GB
Crucial Technology CT102464BF160B-16F 8GB
Corsair CMK64GX4M4C3333C16 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
SK Hynix HMA81GS6JJR8N-VK 8GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-3300C16-16GTZKW 16GB
Kingston 9905403-156.A00LF 2GB
Samsung M393B1K70EB0-CH9 8GB
Kingston KHX1600C9D3/4GX 4GB
Hyundai Inc AR36C18S8K2HU416R 8GB
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CB8GS2400.C8D 8GB
Kingston 99U5471-020.A00LF 4GB
Corsair CMR16GX4M2D3000C16 8GB
AMD R5S38G1601U2S 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
Kingston 99U5584-007.A00LF 4GB
G Skill Intl F4-2400C17-4GVR 4GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Samsung M471A1G43EB1-CRC 8GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-4400C19-16GTZR 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston ACR26D4S9D8ME-16 16GB
报告一个错误
×
Bug description
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