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G Skill Intl F4-4000C14-16GTZR 16GB
Team Group Inc. TEAMGROUP-lnd-2133 8GB

G Skill Intl F4-4000C14-16GTZR 16GB vs Team Group Inc. TEAMGROUP-lnd-2133 8GB

总分
star star star star star
G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

总分
star star star star star
Team Group Inc. TEAMGROUP-lnd-2133 8GB

Team Group Inc. TEAMGROUP-lnd-2133 8GB

差异 规格 评论

差异

G Skill Intl F4-4000C14-16GTZR 16GB 需要考虑的原因
G Skill Intl F4-4000C14-16GTZR 16GB
报告一个错误
  • 更快的读取速度，GB/s
    24 left arrow 12.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    20.0 left arrow 6.1
    测试中的平均数值
Team Group Inc. TEAMGROUP-lnd-2133 8GB 需要考虑的原因
Team Group Inc. TEAMGROUP-lnd-2133 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 29
    左右 -12% 更低的延时

规格

完整的技术规格清单
G Skill Intl F4-4000C14-16GTZR 16GB
Team Group Inc. TEAMGROUP-lnd-2133 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 26
  • 读取速度，GB/s
    24.0 left arrow 12.2
  • 写入速度，GB/s
    20.0 left arrow 6.1
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    4156 left arrow 1711

G Skill Intl F4-4000C14-16GTZR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB

Team Group Inc. TEAMGROUP-lnd-2133 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70QB0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Team Group Inc. TEAMGROUP-lnd-2133 8GB
Team Group Inc. TEAMGROUP-lnd-2133 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Kingston K6VDX7-MIE 8GB
Kingston K6VDX7-MIE 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3200C16-8GVKBN 8GB
G Skill Intl F4-3200C16-8GVKBN 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3600C18-32GVK 32GB
G Skill Intl F4-3600C18-32GVK 32GB
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Kingston 99U5474-037.A00LF 4GB
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Kingston 9965640-004.C00G 16GB
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Corsair CMU32GX4M2C3333C16 16GB
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Corsair CMY8GX3M2A2666C10 4GB
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Micron Technology 18ASF2G72PDZ-2G3A1 16GB
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PNY Electronics PNY 2GB
G Skill Intl F4-3000C15-4GRBB 4GB
G Skill Intl F4-3000C15-4GRBB 4GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
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OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
内存RAM
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Avant Technology W642GU42J9266N8 16GB
内存RAM
Kingston KHX1866C10D3/8GX 8GB
Kingston KHX1866C10D3/8GX 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
内存RAM
Kingston HP669238-071-HYC 4GB
Kingston HP669238-071-HYC 4GB
Corsair CMK16GX4M2D3600C18 8GB
Corsair CMK16GX4M2D3600C18 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
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Kingston 9905668-001.A00G 8GB
Kingston 9905668-001.A00G 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
SK Hynix HMA41GU6AFR8N-TF 8GB
SK Hynix HMA41GU6AFR8N-TF 8GB
内存RAM