PNY Electronics PNY 2GB vs G Skill Intl F4-3000C15-4GRBB 4GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

G Skill Intl F4-3000C15-4GRBB 4GB

G Skill Intl F4-3000C15-4GRBB 4GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 18% 更低的延时

G Skill Intl F4-3000C15-4GRBB 4GB

需要考虑的原因
G Skill Intl F4-3000C15-4GRBB 4GB

报告一个错误

更快的读取速度，GB/s

15.8 13.8

测试中的平均数值
更快的写入速度，GB/s

12.5 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

G Skill Intl F4-3000C15-4GRBB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 33
读取速度，GB/s

13.8 15.8
写入速度，GB/s

8.4 12.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 2994

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A4G43AB2-CVF 32GB

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Kingston 9905598-044.A00G 16GB

Kingston 9905598-044.A00G 16GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Maxsun MSD44G24Q3 4GB

Maxsun MSD44G24Q3 4GB

A-DATA Technology VDQVE1B16 2GB

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Apacer Technology 78.CAGR4.DFC0B 8GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Hewlett-Packard 7EH67AA# 8GB

Hewlett-Packard 7EH67AA# 8GB