G Skill Intl F5-6400J3239G16G 16GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

G Skill Intl F5-6400J3239G16G 16GB vs Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

总分

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

总分

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

差异规格评论

差异

G Skill Intl F5-6400J3239G16G 16GB

需要考虑的原因
G Skill Intl F5-6400J3239G16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 29

左右 10% 更低的延时

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

需要考虑的原因
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

报告一个错误

更快的读取速度，GB/s

22.8 17.8

测试中的平均数值
更快的写入速度，GB/s

16.9 15.7

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

G Skill Intl F5-6400J3239G16G 16GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

主要特点

存储器类型

DDR5 DDR4
PassMark中的延时，ns

26 29
读取速度，GB/s

17.8 22.8
写入速度，GB/s

15.7 16.9
内存带宽，mbps

19200 21300

Other

描述

PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

no data / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3867 3792

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99P5474-014.A00LF 4GB

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Kingston KH2400C15D4/8 8GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

Crucial Technology CT51264BA160B.C16F 4GB

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Kingston ASU21D4U5S8MB-8 8GB

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A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Kingston 9905700-047.A00G 16GB

Kingston 9905700-047.A00G 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Corsair CMU32GX4M2C3000C16 16GB

Corsair CMU32GX4M2C3000C16 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F4-4500C19-8GTZKKE 8GB

G Skill Intl F4-4500C19-8GTZKKE 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Avant Technology W6451U67J7240NB 4GB

Avant Technology W6451U67J7240NB 4GB

Kingston ACR16D3LS1NGG/4G 4GB

Kingston ACR16D3LS1NGG/4G 4GB

G Skill Intl F4-3400C16-16GVR 16GB

G Skill Intl F4-3400C16-16GVR 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Ramaxel Technology RMSA3300MH78HBF-2666 16GB

Ramaxel Technology RMSA3300MH78HBF-2666 16GB