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Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
比较
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
总分
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
差异
规格
评论
差异
需要考虑的原因
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
报告一个错误
更快的读取速度,GB/s
16
14.6
测试中的平均数值
更快的写入速度,GB/s
11.2
9.9
测试中的平均数值
更高的内存带宽,mbps
25600
19200
左右 1.33% 更高的带宽
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
28
左右 -12% 更低的延时
规格
完整的技术规格清单
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
28
25
读取速度,GB/s
16.0
14.6
写入速度,GB/s
11.2
9.9
内存带宽,mbps
25600
19200
Other
描述
PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2901
2427
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB RAM的比较
Kingston 8ATF1G64AZ-2G1B1 8GB
Kingston KP223C-ELD 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology CT51264AC800.C16FC 4GB
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Qimonda 64T128020EDL2.5C2 1GB
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Micron Technology 18HTF12872AY-800F1 1GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3200C16-4GTZ 4GB
Corsair CMZ16GX3M2A2400C10 8GB
Apacer Technology GD2.1527CS.001 8GB
报告一个错误
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Bug description
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