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Golden Empire 1GB DDR2 800 CAS=4 1GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
比较
Golden Empire 1GB DDR2 800 CAS=4 1GB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
总分
Golden Empire 1GB DDR2 800 CAS=4 1GB
总分
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
差异
规格
评论
差异
需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
更快的读取速度,GB/s
4
19.4
测试中的平均数值
更快的写入速度,GB/s
2,066.5
16.3
测试中的平均数值
需要考虑的原因
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
报告一个错误
低于PassMark测试中的延时,ns
32
49
左右 -53% 更低的延时
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
49
32
读取速度,GB/s
4,577.1
19.4
写入速度,GB/s
2,066.5
16.3
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
737
3726
Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较
Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4SFRA266.M16FR 16GB
Samsung M471B5273DH0-CK0 4GB
Crucial Technology CT4G4DFS8213.C8FBD1 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMR16GX4M2F4000C19 8GB
Hexon Technology Pte Ltd HEXON 1GB
A-DATA Technology DDR4 3200 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4DFD832A.C16FN 16GB
A-DATA Technology AD73I1C1674EV 4GB
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4SFD8213.C16FDD2 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4DFD8213.M16FB 16GB
Crucial Technology CT51264BD160B.C16F 4GB
Chun Well Technology Holding Limited MD4U1636181DCW 16G
Crucial Technology CT51264BA1339.D16F 4GB
SK Hynix HMA851S6DJR6N-XN 4GB
报告一个错误
×
Bug description
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