Golden Empire 1GB DDR2 800 CAS=4 1GB vs Corsair CMSX16GX4M2A3000C16 8GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

Corsair CMSX16GX4M2A3000C16 8GB

Corsair CMSX16GX4M2A3000C16 8GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

更快的读取速度，GB/s

4 16.5

测试中的平均数值
更快的写入速度，GB/s

2,066.5 13.1

测试中的平均数值

Corsair CMSX16GX4M2A3000C16 8GB

需要考虑的原因
Corsair CMSX16GX4M2A3000C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 49

左右 -81% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

Corsair CMSX16GX4M2A3000C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 27
读取速度，GB/s

4,577.1 16.5
写入速度，GB/s

2,066.5 13.1
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

737 3061

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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G Skill Intl F4-3000C16-8GTZR 8GB

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G Skill Intl F4-3600C19-8GSXKB 8GB

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Samsung M471B5173QH0-YK0 4GB

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Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston XW21KG-MIE2 8GB

Kingston XW21KG-MIE2 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Crucial Technology CT32G4SFD832A.M16FB 32GB

Crucial Technology CT32G4SFD832A.M16FB 32GB

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AMD AE34G1601U1 4GB

Kingston 9905734-018.A00G 16GB

Kingston 9905734-018.A00G 16GB