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Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-2666C18-32GTZN 32GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs G Skill Intl F4-2666C18-32GTZN 32GB

总分
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分
star star star star star
G Skill Intl F4-2666C18-32GTZN 32GB

G Skill Intl F4-2666C18-32GTZN 32GB

差异 规格 评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB 需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 19.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,066.5 left arrow 15.5
    测试中的平均数值
G Skill Intl F4-2666C18-32GTZN 32GB 需要考虑的原因
G Skill Intl F4-2666C18-32GTZN 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 49
    左右 -58% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-2666C18-32GTZN 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 31
  • 读取速度，GB/s
    4,577.1 left arrow 19.1
  • 写入速度，GB/s
    2,066.5 left arrow 15.5
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    737 left arrow 3753

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

G Skill Intl F4-2666C18-32GTZN 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Kingston 9965589-033.D00G 8GB
Kingston 9965589-033.D00G 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kllisre M378A1K43BB2-CRC 8GB
Kllisre M378A1K43BB2-CRC 8GB
内存RAM
Kingston 99U5471-052.A00LF 8GB
Kingston 99U5471-052.A00LF 8GB
G Skill Intl F4-3000C16-8GVRB 8GB
G Skill Intl F4-3000C16-8GVRB 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Apacer Technology D12.2326WH.001 16GB
Apacer Technology D12.2326WH.001 16GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Kingston KF3200C20S4/16G 16GB
Kingston KF3200C20S4/16G 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Gloway International (HK) STK4U2400D17082C 8GB
Gloway International (HK) STK4U2400D17082C 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-2400C17-8GDBVR 8GB
G Skill Intl F4-2400C17-8GDBVR 8GB
内存RAM
Samsung M378B1G73BH0-CK0 8GB
Samsung M378B1G73BH0-CK0 8GB
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
内存RAM
Samsung M471B5773DH0-CH9 2GB
Samsung M471B5773DH0-CH9 2GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M471A5143EB1-CRC 4GB
Samsung M471A5143EB1-CRC 4GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Apacer Technology 78.C1GMW.AUC0B 8GB
Apacer Technology 78.C1GMW.AUC0B 8GB
内存RAM