Golden Empire 1GB DDR2 800 CAS=4 1GB vs G Skill Intl F4-3200C16-16GTZSW 16GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

G Skill Intl F4-3200C16-16GTZSW 16GB

G Skill Intl F4-3200C16-16GTZSW 16GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

更快的读取速度，GB/s

4 18.2

测试中的平均数值
更快的写入速度，GB/s

2,066.5 14.3

测试中的平均数值

G Skill Intl F4-3200C16-16GTZSW 16GB

需要考虑的原因
G Skill Intl F4-3200C16-16GTZSW 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 49

左右 -75% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

G Skill Intl F4-3200C16-16GTZSW 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 28
读取速度，GB/s

4,577.1 18.2
写入速度，GB/s

2,066.5 14.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

737 3663

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMZ16GX3M2A2400C10 8GB

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Ramaxel Technology RMSA3260KC78HAF-2666 8GB

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Panram International Corporation W4N2666PS-8G 8GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Samsung M3 78T2863QZS-CF7 1GB

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Corsair CM4X16GC3200C16K2 16GB