Golden Empire 1GB DDR2 800 CAS=4 1GB vs Kingston 9965596-029.B00G 4GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

Kingston 9965596-029.B00G 4GB

Kingston 9965596-029.B00G 4GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

Kingston 9965596-029.B00G 4GB

需要考虑的原因
Kingston 9965596-029.B00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 49

左右 -40% 更低的延时
更快的读取速度，GB/s

9.6 4

测试中的平均数值
更快的写入速度，GB/s

7.3 2,066.5

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston 9965596-029.B00G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 35
读取速度，GB/s

4,577.1 9.6
写入速度，GB/s

2,066.5 7.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

737 2211

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 93T5750CZA-CE6 2GB

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SK Hynix HMT351S6EFR8C-PB 4GB

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Peak Electronics 256X64M-67E 2GB

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SK Hynix HMA851S6CJR6N-UH 4GB

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Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F4-4000C17-8GVKB 8GB

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Samsung M395T5160QZ4-CE66 2GB

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G Skill Intl F4-3600C16-8GTZKW 8GB

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G Skill Intl F4-2400C14-16GVK 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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Crucial Technology BLT8G4D30AETA.K16FD 8GB