Golden Empire 1GB DDR2 800 CAS=4 1GB vs Micron Technology 8ATF51264AZ-2G1A1 4GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

Micron Technology 8ATF51264AZ-2G1A1 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

更快的读取速度，GB/s

4 12.2

测试中的平均数值

Micron Technology 8ATF51264AZ-2G1A1 4GB

需要考虑的原因
Micron Technology 8ATF51264AZ-2G1A1 4GB

报告一个错误

低于PassMark测试中的延时，ns

43 49

左右 -14% 更低的延时
更快的写入速度，GB/s

9.7 2,066.5

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 43
读取速度，GB/s

4,577.1 12.2
写入速度，GB/s

2,066.5 9.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

737 2501

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Apacer Technology 78.CAGRN.40C0B 8GB

Apacer Technology 78.CAGRN.40C0B 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Essencore Limited KD48GU880-32A160T 8GB

Essencore Limited KD48GU880-32A160T 8GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Gold Key Technology Co Ltd NMUD480E85-3000D 8GB

Gold Key Technology Co Ltd NMUD480E85-3000D 8GB

Essencore Limited KD4AGS88A-26N1600 16GB

Essencore Limited KD4AGS88A-26N1600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Crucial Technology BLS8G4D32AESEK.M8FE 8GB

Crucial Technology BLS8G4D32AESEK.M8FE 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Apacer Technology D22.23263S.002 16GB

Apacer Technology D22.23263S.002 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

OCMEMORY OCM2933CL16-16GBH 16GB

OCMEMORY OCM2933CL16-16GBH 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Team Group Inc. TEAMGROUP-D4-3733 8GB

Team Group Inc. TEAMGROUP-D4-3733 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Ramaxel Technology RMUA5110MD78HAF-2666 8GB

Ramaxel Technology RMUA5110MD78HAF-2666 8GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Crucial Technology CT4G4DFS8213.C8FAR 4GB

Crucial Technology CT4G4DFS8213.C8FAR 4GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB