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Golden Empire 1GB DDR2 800 CAS=4 1GB
Panram International Corporation PUD43000C168G2NJR 8GB
比较
Golden Empire 1GB DDR2 800 CAS=4 1GB vs Panram International Corporation PUD43000C168G2NJR 8GB
总分
Golden Empire 1GB DDR2 800 CAS=4 1GB
总分
Panram International Corporation PUD43000C168G2NJR 8GB
差异
规格
评论
差异
需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
更快的读取速度,GB/s
4
15.9
测试中的平均数值
更快的写入速度,GB/s
2,066.5
12.1
测试中的平均数值
需要考虑的原因
Panram International Corporation PUD43000C168G2NJR 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
49
左右 -96% 更低的延时
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
Panram International Corporation PUD43000C168G2NJR 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
49
25
读取速度,GB/s
4,577.1
15.9
写入速度,GB/s
2,066.5
12.1
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
737
2781
Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较
Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB
Panram International Corporation PUD43000C168G2NJR 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3600C19-8GVSB 8GB
Kingston 9905469-143.A00LF 4GB
Corsair CMK16GX4M2B3000C15 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Panram International Corporation PUD43000C168G2NJR 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMWB8G1L2666A16W4 8GB
SK Hynix HMT325S6CFR8C-H9 2GB
Transcend Information TS512MLH64V1H 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C14-8GTZ 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB
Samsung M4 70T5663QZ3-CF7 2GB
Samsung M471A2K43CB1-CRCR 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Heoriady HX2666CX15D4/4G 4GB
Kingston KVR16N11/8-SP 8GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C16-8GVRB 8GB
Kingston 99U5428-018.A00LF 8GB
Samsung M471A1G43DB0-0-B 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology DDR4 2800 2OZ 4GB
报告一个错误
×
Bug description
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