Golden Empire 1GB DDR2 800 CAS=4 1GB vs Samsung M393A1G40DB0-B`B 8GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

Samsung M393A1G40DB0-B`B 8GB

Samsung M393A1G40DB0-B`B 8GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

更快的读取速度，GB/s

4 10.4

测试中的平均数值

Samsung M393A1G40DB0-B`B 8GB

需要考虑的原因
Samsung M393A1G40DB0-B`B 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 49

左右 -48% 更低的延时
更快的写入速度，GB/s

5.5 2,066.5

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

Samsung M393A1G40DB0-B`B 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 33
读取速度，GB/s

4,577.1 10.4
写入速度，GB/s

2,066.5 5.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

737 1806

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Samsung M393A1G40DB0-B`B 8GB

Samsung M393A1G40DB0-B`B 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston 9965596-002.B00G 4GB

Kingston 9965596-002.B00G 4GB

Kingston KN2M64-ETB 8GB

Kingston KN2M64-ETB 8GB

Crucial Technology CT8G4DFS824A.C8FDD1 8GB

Crucial Technology CT8G4DFS824A.C8FDD1 8GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Panram International Corporation M424051 4GB

Panram International Corporation M424051 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Wilk Elektronik S.A. GR2133S464L15S/8G 8GB

Wilk Elektronik S.A. GR2133S464L15S/8G 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

G Skill Intl F4-3200C16-32GTZN 32GB

G Skill Intl F4-3200C16-32GTZN 32GB

Kingston 9905471-076.A00LF 8GB

Kingston 9905471-076.A00LF 8GB

AMD R748G2400S2S 8GB

AMD R748G2400S2S 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

G Skill Intl F4-2800C15-8GRK 8GB

G Skill Intl F4-2800C15-8GRK 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M471A1G43DB0-CPB 8GB

Samsung M471A1G43DB0-CPB 8GB

Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

Avexir Technologies Corporation T-20181206 8GB

Avexir Technologies Corporation T-20181206 8GB

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB