Golden Empire 1GB DDR2 800 CAS=4 1GB vs Samsung V-GeN D4S8GL26A8TL5 8GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

Samsung V-GeN D4S8GL26A8TL5 8GB

Samsung V-GeN D4S8GL26A8TL5 8GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

更快的读取速度，GB/s

4 18

测试中的平均数值
更快的写入速度，GB/s

2,066.5 12.8

测试中的平均数值

Samsung V-GeN D4S8GL26A8TL5 8GB

需要考虑的原因
Samsung V-GeN D4S8GL26A8TL5 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 49

左右 -123% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

Samsung V-GeN D4S8GL26A8TL5 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 22
读取速度，GB/s

4,577.1 18.0
写入速度，GB/s

2,066.5 12.8
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

737 3110

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hexon Technology Pte Ltd HEXON 1GB

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Kingston 9905403-090.A01LF 4GB

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Transcend Information TS512MLH64V4H 4GB

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Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Crucial Technology CT8G4DFD824A.C16FF 8GB

Crucial Technology CT8G4DFD824A.C16FF 8GB

Samsung M471A5244CB0-CWE 4GB

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G Skill Intl F4-2133C15-16GVR 16GB

G Skill Intl F4-2133C15-16GVR 16GB

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Kingston 9905469-143.A00LF 4GB

G Skill Intl F4-3200C14-16GTZSW 16GB

G Skill Intl F4-3200C14-16GTZSW 16GB