Hexon Technology Pte Ltd HEXON 1GB vs Corsair CMK64GX4M2A2666C16 32GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Corsair CMK64GX4M2A2666C16 32GB

Corsair CMK64GX4M2A2666C16 32GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 17

测试中的平均数值

Corsair CMK64GX4M2A2666C16 32GB

需要考虑的原因
Corsair CMK64GX4M2A2666C16 32GB

报告一个错误

低于PassMark测试中的延时，ns

31 62

左右 -100% 更低的延时
更快的写入速度，GB/s

13.3 1,843.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Corsair CMK64GX4M2A2666C16 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 31
读取速度，GB/s

3,556.6 17.0
写入速度，GB/s

1,843.6 13.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

542 3602

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G3N18AES4.16FE 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

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SK Hynix HMA84GR7AFR4N-VK 32GB

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Kingston 9905403-011.A03LF 2GB

Crucial Technology BLS8G4D240FSB.M16FBD 8GB

Crucial Technology BLS8G4D240FSB.M16FBD 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston MSI26D4S9S8HJ-8 8GB

Kingston MSI26D4S9S8HJ-8 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-2666C15-4GRR 4GB

G Skill Intl F4-2666C15-4GRR 4GB