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Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BL16G26C16U4B.16FD 16GB

Hexon Technology Pte Ltd HEXON 1GB vs Crucial Technology BL16G26C16U4B.16FD 16GB

总分
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分
star star star star star
Crucial Technology BL16G26C16U4B.16FD 16GB

Crucial Technology BL16G26C16U4B.16FD 16GB

差异 规格 评论

差异

Hexon Technology Pte Ltd HEXON 1GB 需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.2
    测试中的平均数值
Crucial Technology BL16G26C16U4B.16FD 16GB 需要考虑的原因
Crucial Technology BL16G26C16U4B.16FD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 62
    左右 -107% 更低的延时
  • 更快的写入速度，GB/s
    14.5 left arrow 1,843.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BL16G26C16U4B.16FD 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 30
  • 读取速度，GB/s
    3,556.6 left arrow 17.2
  • 写入速度，GB/s
    1,843.6 left arrow 14.5
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    542 left arrow 3505

Hexon Technology Pte Ltd HEXON 1GB RAM的比较

SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB

Crucial Technology BL16G26C16U4B.16FD 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Crucial Technology CT16G4DFD824A.M16FE 16GB
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内存RAM
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内存RAM
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内存RAM
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