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Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3200C18-8GRS 8GB

Hexon Technology Pte Ltd HEXON 1GB vs G Skill Intl F4-3200C18-8GRS 8GB

总分
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分
star star star star star
G Skill Intl F4-3200C18-8GRS 8GB

G Skill Intl F4-3200C18-8GRS 8GB

差异 规格 评论

差异

Hexon Technology Pte Ltd HEXON 1GB 需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.2
    测试中的平均数值
G Skill Intl F4-3200C18-8GRS 8GB 需要考虑的原因
G Skill Intl F4-3200C18-8GRS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 62
    左右 -114% 更低的延时
  • 更快的写入速度，GB/s
    13.4 left arrow 1,843.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3200C18-8GRS 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 29
  • 读取速度，GB/s
    3,556.6 left arrow 17.2
  • 写入速度，GB/s
    1,843.6 left arrow 13.4
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    542 left arrow 3199

Hexon Technology Pte Ltd HEXON 1GB RAM的比较

SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB

G Skill Intl F4-3200C18-8GRS 8GB RAM的比较

Corsair CM5S16GM4800A40K2 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3200C18-8GRS 8GB
G Skill Intl F4-3200C18-8GRS 8GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
G Skill Intl F4-2400C17-16GIS 16GB
G Skill Intl F4-2400C17-16GIS 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingston KF3000C16D4/32GX 32GB
Kingston KF3000C16D4/32GX 32GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-3600C14-8GTZN 8GB
G Skill Intl F4-3600C14-8GTZN 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung M471A2K43CB1-CTCT 16GB
Samsung M471A2K43CB1-CTCT 16GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology BLT8G4D26AFTA.16FBD 8GB
Crucial Technology BLT8G4D26AFTA.16FBD 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
内存RAM
Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
Kingston 9905700-012.A00G 8GB
Kingston 9905700-012.A00G 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
InnoDisk Corporation M4S0-AGS1O5IK 16GB
InnoDisk Corporation M4S0-AGS1O5IK 16GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology BL8G30C15U4B.M8FE 8GB
Crucial Technology BL8G30C15U4B.M8FE 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
内存RAM