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Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3600C14-8GTRSB 8GB

Hexon Technology Pte Ltd HEXON 1GB vs G Skill Intl F4-3600C14-8GTRSB 8GB

总分
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分
star star star star star
G Skill Intl F4-3600C14-8GTRSB 8GB

G Skill Intl F4-3600C14-8GTRSB 8GB

差异 规格 评论

差异

Hexon Technology Pte Ltd HEXON 1GB 需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.7
    测试中的平均数值
G Skill Intl F4-3600C14-8GTRSB 8GB 需要考虑的原因
G Skill Intl F4-3600C14-8GTRSB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 62
    左右 -100% 更低的延时
  • 更快的写入速度，GB/s
    17.1 left arrow 1,843.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3600C14-8GTRSB 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 31
  • 读取速度，GB/s
    3,556.6 left arrow 17.7
  • 写入速度，GB/s
    1,843.6 left arrow 17.1
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    542 left arrow 3711

Hexon Technology Pte Ltd HEXON 1GB RAM的比较

SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB

G Skill Intl F4-3600C14-8GTRSB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M393B5270CH0-CH9 4GB
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内存RAM
Kingston 9905403-038.A00LF 4GB
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Avant Technology J641GU42J7240N3 8GB
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内存RAM
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Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
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内存RAM
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内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB
内存RAM
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Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Corsair CMK64GX4M4B3600C18 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMT64GX4M4K3600C18 16GB
Corsair CMT64GX4M4K3600C18 16GB
内存RAM
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Ramaxel Technology RMR5040MM58F9F1600 4GB
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Asgard VMA45UG-MEC1U2AW2 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
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Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
内存RAM
Kingston 99U5584-017.A00LF 4GB
Kingston 99U5584-017.A00LF 4GB
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内存RAM
Kingston 99U5474-022.A00LF 2GB
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Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Corsair CM4X16GE2666Z16K4 16GB
Corsair CM4X16GE2666Z16K4 16GB
内存RAM