Hexon Technology Pte Ltd HEXON 1GB vs G Skill Intl F4-3600C17-8GTZSW 8GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

G Skill Intl F4-3600C17-8GTZSW 8GB

G Skill Intl F4-3600C17-8GTZSW 8GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 21.6

测试中的平均数值

G Skill Intl F4-3600C17-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-3600C17-8GTZSW 8GB

报告一个错误

低于PassMark测试中的延时，ns

17 62

左右 -265% 更低的延时
更快的写入速度，GB/s

17.7 1,843.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-3600C17-8GTZSW 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 17
读取速度，GB/s

3,556.6 21.6
写入速度，GB/s

1,843.6 17.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

542 3702

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology CT16G4SFDFD4A.M16FH 16GB

Crucial Technology CT16G4SFDFD4A.M16FH 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-3600C17-8GTZSW 8GB

G Skill Intl F4-3600C17-8GTZSW 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Kingston KMKYF9-MIH 8GB

Kingston KMKYF9-MIH 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Transcend Information TS1GSH64V1H 8GB

Transcend Information TS1GSH64V1H 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Panram International Corporation PUD42133C154G2VS 4GB

Panram International Corporation PUD42133C154G2VS 4GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

Crucial Technology BLT8G4D30AETA.K16FE 8GB

Crucial Technology BLT8G4D30AETA.K16FE 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology BLS8G4S26BFSDK.8FD 8GB

Crucial Technology BLS8G4S26BFSDK.8FD 8GB

Kingston 99U5584-007.A00LF 4GB

Kingston 99U5584-007.A00LF 4GB

G Skill Intl F4-3733C17-8GTZKK 8GB

G Skill Intl F4-3733C17-8GTZKK 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology BLE8G4D26AFEA.16FBD 8GB

Crucial Technology BLE8G4D26AFEA.16FBD 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

V-GEN D4H8GS24A8 8GB

V-GEN D4H8GS24A8 8GB