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Hexon Technology Pte Ltd HEXON 1GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

Hexon Technology Pte Ltd HEXON 1GB vs Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

总分
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分
star star star star star
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

差异 规格 评论

差异

Hexon Technology Pte Ltd HEXON 1GB 需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.8
    测试中的平均数值
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB 需要考虑的原因
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 62
    左右 -51% 更低的延时
  • 更快的写入速度，GB/s
    13.6 left arrow 1,843.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 41
  • 读取速度，GB/s
    3,556.6 left arrow 15.8
  • 写入速度，GB/s
    1,843.6 left arrow 13.6
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    542 left arrow 3073

Hexon Technology Pte Ltd HEXON 1GB RAM的比较

SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
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Kingston 9905403-061.A00LF 2GB
Corsair CMR64GX4M4C3200C16 16GB
Corsair CMR64GX4M4C3200C16 16GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Samsung M471A2K43EB1-CTD 16GB
Samsung M471A2K43EB1-CTD 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Corsair CMK32GX4M4K3600C16 8GB
Corsair CMK32GX4M4K3600C16 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Kingston KF2666C16D4/16G 16GB
Kingston KF2666C16D4/16G 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Corsair CMW16GX4M2D3000C16 8GB
Corsair CMW16GX4M2D3000C16 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Mushkin MB[A/B]4U240FFFF16G 16GB
Mushkin MB[A/B]4U240FFFF16G 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Corsair CMV16GX4M1L2400C16 16GB
Corsair CMV16GX4M1L2400C16 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Micron Technology 72ASS4G72LZ-2G3A2 32GB
Micron Technology 72ASS4G72LZ-2G3A2 32GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Corsair CMW32GX4M2D3600C18 16GB
Corsair CMW32GX4M2D3600C18 16GB
内存RAM
Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
Apacer Technology GD2.1542WS.001 8GB
Apacer Technology GD2.1542WS.001 8GB
内存RAM