Hexon Technology Pte Ltd HEXON 1GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

Hexon Technology Pte Ltd HEXON 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 62

左右 -68% 更低的延时
更快的读取速度，GB/s

9.5 3

测试中的平均数值
更快的写入速度，GB/s

7.7 1,843.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 37
读取速度，GB/s

3,556.6 9.5
写入速度，GB/s

1,843.6 7.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

542 1949

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMD64GX4M4B3000C15 16GB

Corsair CMD64GX4M4B3000C15 16GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

Corsair CMU32GX4M4C3000C15 8GB

Corsair CMU32GX4M4C3000C15 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CMK32GX4M4A2666C15 8GB

Corsair CMK32GX4M4A2666C15 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Mushkin 99[2/7/4]200[F/T] 8GB

Mushkin 99[2/7/4]200[F/T] 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Kingston 9965640-008.A01G 32GB

Kingston 9965640-008.A01G 32GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Ramaxel Technology RMSA3260MB78HAF2400 8GB

Ramaxel Technology RMSA3260MB78HAF2400 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Kingston KHX2400C12D4/4GX 4GB

Kingston KHX2400C12D4/4GX 4GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Kingston KF2666C16D4/16G 16GB

Kingston KF2666C16D4/16G 16GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Samsung M471A2K43DB1-CTD 16GB

Samsung M471A2K43DB1-CTD 16GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Crucial Technology CT16G4DFD8266.C16FN 16GB

Crucial Technology CT16G4DFD8266.C16FN 16GB