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Hexon Technology Pte Ltd HEXON 1GB
Kingston KTD3KX-HYA 8GB

Hexon Technology Pte Ltd HEXON 1GB vs Kingston KTD3KX-HYA 8GB

总分
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分
star star star star star
Kingston KTD3KX-HYA 8GB

Kingston KTD3KX-HYA 8GB

差异 规格 评论

差异

Hexon Technology Pte Ltd HEXON 1GB 需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
Kingston KTD3KX-HYA 8GB 需要考虑的原因
Kingston KTD3KX-HYA 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 62
    左右 -48% 更低的延时
  • 更快的读取速度，GB/s
    7.4 left arrow 3
    测试中的平均数值
  • 更快的写入速度，GB/s
    6.3 left arrow 1,843.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
Kingston KTD3KX-HYA 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 42
  • 读取速度，GB/s
    3,556.6 left arrow 7.4
  • 写入速度，GB/s
    1,843.6 left arrow 6.3
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    542 left arrow 1331

Hexon Technology Pte Ltd HEXON 1GB RAM的比较

SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB

Kingston KTD3KX-HYA 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingston 99U5700-028.A00G 8GB
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内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston KTD3KX-HYA 8GB
Kingston KTD3KX-HYA 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
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内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
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内存RAM
Samsung M393B5170FH0-CK0 4GB
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G Skill Intl F4-2400C17-8GDBVR 8GB
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内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
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内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingston HP26D4S9S8MHF-8 8GB
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
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AMD AE34G1601U1 4GB
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Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Samsung SF4721G4CKHH6DFSDS 8GB
Samsung SF4721G4CKHH6DFSDS 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Samsung M471A5143DB0-CPB 4GB
Samsung M471A5143DB0-CPB 4GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
SK Hynix HMA41GR7MFR4N-TF 8GB
SK Hynix HMA41GR7MFR4N-TF 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
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Crucial Technology CT16G4DFD832A.C16FN 16GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
内存RAM