Hexon Technology Pte Ltd HEXON 1GB vs Micron Technology AFSD416ES1P 16GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Micron Technology AFSD416ES1P 16GB

Micron Technology AFSD416ES1P 16GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 14.5

测试中的平均数值

Micron Technology AFSD416ES1P 16GB

需要考虑的原因
Micron Technology AFSD416ES1P 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 62

左右 -148% 更低的延时
更快的写入速度，GB/s

10.7 1,843.6

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Micron Technology AFSD416ES1P 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 25
读取速度，GB/s

3,556.6 14.5
写入速度，GB/s

1,843.6 10.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

542 2620

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905598-040.A00G 16GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

G Skill Intl F4-3600C14-8GTZN 8GB

G Skill Intl F4-3600C14-8GTZN 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Samsung M471A2K43CB1-CRC 16GB

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Kingston ACR512X64D3S13C9G 4GB

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Crucial Technology BLS8G4D32AESEK.M8FE 8GB

Crucial Technology BLS8G4D32AESEK.M8FE 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3200C16-16GTZKY 16GB

G Skill Intl F4-3200C16-16GTZKY 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Crucial Technology BLS16G4D240FSC.16FBR 16GB

Crucial Technology BLS16G4D240FSC.16FBR 16GB

Samsung M471B5173QH0-YK0 4GB

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Kingston 9905622-058.A00G 8GB

Kingston 9905622-058.A00G 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

V-GEN D4S8GL30A8TS5 8GB

V-GEN D4S8GL30A8TS5 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-4400C16-8GVK 8GB

G Skill Intl F4-4400C16-8GVK 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Crucial Technology BLS4G4D26BFSE.8FBD2 4GB

Crucial Technology BLS4G4D26BFSE.8FBD2 4GB

Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

Crucial Technology BLS4G4D240FSA.M8FADM 4GB

Crucial Technology BLS4G4D240FSA.M8FADM 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLS8G4D32AESEK.M8FE 8GB

Crucial Technology BLS8G4D32AESEK.M8FE 8GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Corsair CMD16GX4M4C3200C15 4GB

Corsair CMD16GX4M4C3200C15 4GB