Hexon Technology Pte Ltd HEXON 1GB vs Samsung M391A1G43EB1-CPB 8GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Samsung M391A1G43EB1-CPB 8GB

Samsung M391A1G43EB1-CPB 8GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 12.4

测试中的平均数值

Samsung M391A1G43EB1-CPB 8GB

需要考虑的原因
Samsung M391A1G43EB1-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 62

左右 -148% 更低的延时
更快的写入速度，GB/s

10.6 1,843.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Samsung M391A1G43EB1-CPB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 25
读取速度，GB/s

3,556.6 12.4
写入速度，GB/s

1,843.6 10.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

542 1511

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B2G70BH0-CK0 16GB

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Crucial Technology BLE4G4D32AEEA.K8FD 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Wilk Elektronik S.A. W-HK26S16G 16GB

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G Skill Intl F4-3300C16-4GRKD 4GB

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Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Crucial Technology CT16G4DFD824A.M16FH 16GB

Crucial Technology CT16G4DFD824A.M16FH 16GB

Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

Corsair CMT16GX4M2Z3200C16 8GB

Corsair CMT16GX4M2Z3200C16 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair MK16GX44A2666C16 4GB

Corsair MK16GX44A2666C16 4GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

G Skill Intl F4-3600C14-16GTZRA 16GB

G Skill Intl F4-3600C14-16GTZRA 16GB