Hexon Technology Pte Ltd HEXON 1GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 18.1

测试中的平均数值

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

需要考虑的原因
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 62

左右 -170% 更低的延时
更快的写入速度，GB/s

15.0 1,843.6

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 23
读取速度，GB/s

3,556.6 18.1
写入速度，GB/s

1,843.6 15.0
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

542 3317

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.B1GN3.4032B 4GB

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Samsung M471B5173BH0-CK0 4GB

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UMAX Technology D4-3200-16G-1024X8-L 16GB

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Samsung M391B5673EH1-CH9 2GB

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Team Group Inc. TEAMGROUP-UD4-3000 8GB

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Kingston ACR512X64D3S13C9G 4GB

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Crucial Technology BLS8G4D26BFSB.16FD2 8GB

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Samsung M393B2G70BH0-CH9 16GB

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Unifosa Corporation HU564404EP0200 4GB

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Lenovo LMKU8G68AHFHD-32A 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMR16GX4M2D3000C16 8GB

Corsair CMR16GX4M2D3000C16 8GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Crucial Technology BL8G36C16U4W.M8FE1 8GB

Crucial Technology BL8G36C16U4W.M8FE1 8GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

Corsair CM4X16GF3200C22S2 16GB

Corsair CM4X16GF3200C22S2 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

G Skill Intl F4-3000C16-8GVSB 8GB

G Skill Intl F4-3000C16-8GVSB 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Netac Technology Co Ltd EKBLUE4162417AD 8GB

Netac Technology Co Ltd EKBLUE4162417AD 8GB