Hexon Technology Pte Ltd HEXON 1GB vs SK Hynix HMAA1GS6CJR6N-XN 8GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 15.7

测试中的平均数值

SK Hynix HMAA1GS6CJR6N-XN 8GB

需要考虑的原因
SK Hynix HMAA1GS6CJR6N-XN 8GB

报告一个错误

低于PassMark测试中的延时，ns

54 62

左右 -15% 更低的延时
更快的写入速度，GB/s

11.6 1,843.6

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 54
读取速度，GB/s

3,556.6 15.7
写入速度，GB/s

1,843.6 11.6
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

542 2511

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hexon Technology Pte Ltd HEXON 1GB

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SK Hynix HMAA1GS6CJR6N-XN 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Samsung M378B5173BH0-CH9 4GB

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Corsair CM4X16GE2666C18S4 16GB

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Kingston KVR16N11/8-SP 8GB

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PNY Electronics PNY 2GB

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SK Hynix HMAA4GU6AJR8N-VK 32GB

SK Hynix HMAA4GU6AJR8N-VK 32GB

SK Hynix HMT351S6CFR8C-PB 4GB

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Samsung M378A1G43DB0-CPB 8GB

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Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Corsair CMW32GX4M4D3600C18 8GB

Corsair CMW32GX4M4D3600C18 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

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Corsair CMW32GX4M4C3200C16 8GB

Corsair CMW32GX4M4C3200C16 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB

Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB