Hexon Technology Pte Ltd HEXON 1GB vs Smart Modular SMS4WEC3C0K0446SCG 4GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Smart Modular SMS4WEC3C0K0446SCG 4GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 16

测试中的平均数值

Smart Modular SMS4WEC3C0K0446SCG 4GB

需要考虑的原因
Smart Modular SMS4WEC3C0K0446SCG 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 62

左右 -72% 更低的延时
更快的写入速度，GB/s

12.7 1,843.6

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 36
读取速度，GB/s

3,556.6 16.0
写入速度，GB/s

1,843.6 12.7
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

542 2353

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M386B4G70DM0-CMA4 32GB

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Crucial Technology BLM16G40C18U4BL.M8FB 16GB

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Kingston ACR256X64D3S1333C9 2GB

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Micron Technology CT8G4DFD8213.16FA2 8GB

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Team Group Inc. Team-Elite-1333 4GB

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Ramsta Ramsta-2400Mhz-4G 4GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Samsung M378A4G43AB2-CWE 32GB

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Kingston KF3600C18D4/16GX 16GB

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Kingston KF3200C16D4/32GX 32GB

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Crucial Technology CT51264BD1339.M16F 4GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

Kingmax Semiconductor GSLG42F-18---------- 8GB