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Samsung M378A1G43DB0-CPB 8GB
Kingston KWTHG4-MIE 16GB

Samsung M378A1G43DB0-CPB 8GB vs Kingston KWTHG4-MIE 16GB

总分
star star star star star
Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分
star star star star star
Kingston KWTHG4-MIE 16GB

Kingston KWTHG4-MIE 16GB

差异 规格 评论

差异

Samsung M378A1G43DB0-CPB 8GB 需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15 left arrow 14.7
    测试中的平均数值
Kingston KWTHG4-MIE 16GB 需要考虑的原因
Kingston KWTHG4-MIE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 36
    左右 -3% 更低的延时
  • 更快的写入速度，GB/s
    11.1 left arrow 10.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51 更高的带宽

规格

完整的技术规格清单
Samsung M378A1G43DB0-CPB 8GB
Kingston KWTHG4-MIE 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 35
  • 读取速度，GB/s
    15.0 left arrow 14.7
  • 写入速度，GB/s
    10.3 left arrow 11.1
  • 内存带宽，mbps
    17000 left arrow 25600
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2569 left arrow 2855

Samsung M378A1G43DB0-CPB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston KWTHG4-MIE 16GB RAM的比较

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
SK Hynix GKE160SO102408-3000 16GB
SK Hynix GKE160SO102408-3000 16GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Corsair CMR32GX4M4D3200C16 8GB
Corsair CMR32GX4M4D3200C16 8GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
Micron Technology CT8G4DFD8213.16FA2 8GB
Micron Technology CT8G4DFD8213.16FA2 8GB
内存RAM
Corsair CML8GX3M2A1866C9 4GB
Corsair CML8GX3M2A1866C9 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
内存RAM
Kingston HP16D3LS1KBGH/4G 4GB
Kingston HP16D3LS1KBGH/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
内存RAM
G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Corsair CMSX16GX4M2A3000C16 8GB
Corsair CMSX16GX4M2A3000C16 8GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
G Skill Intl F4-3600C19-16GSXWB 16GB
G Skill Intl F4-3600C19-16GSXWB 16GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Apacer Technology 78.C1GQB.4032B 8GB
Apacer Technology 78.C1GQB.4032B 8GB
内存RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Kingston XRMWRN-MIE 16GB
Kingston XRMWRN-MIE 16GB
内存RAM
SpecTek Incorporated PSD34G13332 4GB
SpecTek Incorporated PSD34G13332 4GB
Crucial Technology CT8G4SFS824A.M8FE 8GB
Crucial Technology CT8G4SFS824A.M8FE 8GB
内存RAM