Hexon Technology Pte Ltd HEXON 1GB vs V-GEN D4R8GL24A8R 8GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

V-GEN D4R8GL24A8R 8GB

V-GEN D4R8GL24A8R 8GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

低于PassMark测试中的延时，ns

62 77

左右 19% 更低的延时
更快的读取速度，GB/s

3 15.5

测试中的平均数值

V-GEN D4R8GL24A8R 8GB

需要考虑的原因
V-GEN D4R8GL24A8R 8GB

报告一个错误

更快的写入速度，GB/s

8.2 1,843.6

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

V-GEN D4R8GL24A8R 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 77
读取速度，GB/s

3,556.6 15.5
写入速度，GB/s

1,843.6 8.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

542 1809

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hexon Technology Pte Ltd HEXON 1GB

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Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600

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Kingston ACR256X64D3S1333C9 2GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

A-DATA Technology AO1P26KC8T1-BXPS 8GB

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A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Samsung M391A1G43EB1-CRC 8GB

Samsung M391A1G43EB1-CRC 8GB

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Kingston 99U5428-063.A00LF 8GB

Crucial Technology CT8G4DFD824A.C16FE 8GB

Crucial Technology CT8G4DFD824A.C16FE 8GB