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Hexon Technology Pte Ltd HEXON 1GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

Hexon Technology Pte Ltd HEXON 1GB vs Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

总分
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分
star star star star star
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

差异 规格 评论

差异

Hexon Technology Pte Ltd HEXON 1GB 需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    62 left arrow 67
    左右 7% 更低的延时
  • 更快的读取速度，GB/s
    3 left arrow 16.7
    测试中的平均数值
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB 需要考虑的原因
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
报告一个错误
  • 更快的写入速度，GB/s
    9.0 left arrow 1,843.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 67
  • 读取速度，GB/s
    3,556.6 left arrow 16.7
  • 写入速度，GB/s
    1,843.6 left arrow 9.0
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    542 left arrow 1879

Hexon Technology Pte Ltd HEXON 1GB RAM的比较

SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB

Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
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G Skill Intl F4-3000C14-16GVR 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3200C14-8GTZKW 8GB
G Skill Intl F4-3200C14-8GTZKW 8GB
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Samsung M3 93T5750CZA-CE6 2GB
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Corsair CMT16GX4M2K4000C19 8GB
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内存RAM
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SK Hynix HYMP164U64CP6-Y5 512MB
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G Skill Intl F4-3000C16-16GSXKB 16GB
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Team Group Inc. TEAMGROUP-UD4-4500 8GB
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Samsung M378A5244CB0-CVF 4GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Samsung M471A1K43CB1-CTD 8GB
Samsung M471A1K43CB1-CTD 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
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Crucial Technology BLS8G4D240FSC.16FBD 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
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Crucial Technology BL16G32C16S4B.M16FE 16GB
Crucial Technology BL16G32C16S4B.M16FE 16GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
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Crucial Technology BL16G36C16U4W.M8FB1 16GB
内存RAM