Samsung M3 93T5750CZA-CE6 2GB vs Kingston KHX2400C15D4/8G 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Kingston KHX2400C15D4/8G 8GB

Kingston KHX2400C15D4/8G 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 16.7

测试中的平均数值
更快的写入速度，GB/s

2,622.0 12.4

测试中的平均数值

Kingston KHX2400C15D4/8G 8GB

需要考虑的原因
Kingston KHX2400C15D4/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 77

左右 -141% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Kingston KHX2400C15D4/8G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 32
读取速度，GB/s

3,405.2 16.7
写入速度，GB/s

2,622.0 12.4
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

763 2979

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Kingston KHX2400C15D4/8G 8GB

Kingston KHX2400C15D4/8G 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Crucial Technology CT8G4SFS824A.C8FBD1 8GB

Crucial Technology CT8G4SFS824A.C8FBD1 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

Corsair CMT32GX4M2C3200C14 16GB

Corsair CMT32GX4M2C3200C14 16GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Corsair CMD32GX4M2C3200C14T 16GB

Corsair CMD32GX4M2C3200C14T 16GB

Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB

SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Avant Technology W642GU44J2320NC 16GB

Avant Technology W642GU44J2320NC 16GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

A-DATA Technology AD5U48008G-B 8GB

A-DATA Technology AD5U48008G-B 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Kingston 9905700-025.A00G 8GB

Kingston 9905700-025.A00G 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

SK Hynix HMA82GU6DJR8N-WM 16GB

SK Hynix HMA82GU6DJR8N-WM 16GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Kingston 9905743-034.A00G 8GB

Kingston 9905743-034.A00G 8GB

Samsung M471B5173BH0-CK0 4GB

Samsung M471B5173BH0-CK0 4GB

Corsair CMSX16GX4M2A2666C18 8GB

Corsair CMSX16GX4M2A2666C18 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMK32GX4M4Z2933C16 8GB

Corsair CMK32GX4M4Z2933C16 8GB