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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Crucial Technology CT4G4DFS8213.8FA11 4GB
总分
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
总分
Crucial Technology CT4G4DFS8213.8FA11 4GB
差异
规格
评论
差异
需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
更快的读取速度,GB/s
16.7
15.4
测试中的平均数值
更快的写入速度,GB/s
11.8
11.5
测试中的平均数值
更高的内存带宽,mbps
21300
17000
左右 1.25% 更高的带宽
需要考虑的原因
Crucial Technology CT4G4DFS8213.8FA11 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
27
左右 -13% 更低的延时
规格
完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
27
24
读取速度,GB/s
16.7
15.4
写入速度,GB/s
11.8
11.5
内存带宽,mbps
21300
17000
Other
描述
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2756
2534
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Crucial Technology CT4G4DFS8213.8FA11 4GB RAM的比较
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9965600-023.A00G 16GB
Kingston ACR256X64D3S1333C9 2GB
Kingston KHX2400C14S4/4G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
Samsung M471B5673FH0-CH9 2GB
Apacer Technology D12.2324CS.001 8GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-3200C16-16GTZR 16GB
Kingston KHX2800C14D4/8GX 8GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
A-DATA Technology DDR3 1600 4GB
Gloway International Co. Ltd. TYA4U2666D19321C 32GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology 72ASS8G72LZ-2G3B2 64GB
Samsung M3 78T2953EZ3-CF7 1GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Samsung M471B1G73BH0-YK0 8GB
Samsung M471B1G73EB0-YK0 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Corsair CMN32GX4M2Z4600C18 16GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Kingston ACR32D4S2S8ME-16 16GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
报告一个错误
×
Bug description
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