RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology 72ASS8G72LZ-2G3B2 64GB

Nanya Technology NT512T64U88B0BY-3C 512MB vs Micron Technology 72ASS8G72LZ-2G3B2 64GB

总分
star star star star star
Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分
star star star star star
Micron Technology 72ASS8G72LZ-2G3B2 64GB

Micron Technology 72ASS8G72LZ-2G3B2 64GB

差异 规格 评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB 需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
Micron Technology 72ASS8G72LZ-2G3B2 64GB 需要考虑的原因
Micron Technology 72ASS8G72LZ-2G3B2 64GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 71
    左右 -87% 更低的延时
  • 更快的读取速度，GB/s
    9.3 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    6.6 left arrow 1,322.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology 72ASS8G72LZ-2G3B2 64GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    71 left arrow 38
  • 读取速度，GB/s
    2,831.6 left arrow 9.3
  • 写入速度，GB/s
    1,322.6 left arrow 6.6
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    399 left arrow 2107

Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB

Micron Technology 72ASS8G72LZ-2G3B2 64GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHYXPX-HYJ 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology 72ASS8G72LZ-2G3B2 64GB
Micron Technology 72ASS8G72LZ-2G3B2 64GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
V-GEN D4R8GL24A8R 8GB
V-GEN D4R8GL24A8R 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43DB1-CWE 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CMD64GX4M4C3000C15 16GB
Corsair CMD64GX4M4C3000C15 16GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Kingston 99U5665-004.A00G 4GB
Kingston 99U5665-004.A00G 4GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
InnoDisk Corporation M4S0-8GS1NCIK 8GB
InnoDisk Corporation M4S0-8GS1NCIK 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Kingston 9905625-065.A00G 16GB
Kingston 9905625-065.A00G 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
G Skill Intl F4-3200C16-4GVRB 4GB
G Skill Intl F4-3200C16-4GVRB 4GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
内存RAM
Kingston 99U5403-465.A00LF 8GB
Kingston 99U5403-465.A00LF 8GB
Avant Technology W642GU42J5213N 16GB
Avant Technology W642GU42J5213N 16GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9905701-003.A00G 16GB
Kingston 9905701-003.A00G 16GB
内存RAM