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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3000C15-4GTZB 4GB
比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs G Skill Intl F4-3000C15-4GTZB 4GB
总分
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
总分
G Skill Intl F4-3000C15-4GTZB 4GB
差异
规格
评论
差异
需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
更高的内存带宽,mbps
21300
17000
左右 1.25% 更高的带宽
需要考虑的原因
G Skill Intl F4-3000C15-4GTZB 4GB
报告一个错误
低于PassMark测试中的延时,ns
19
27
左右 -42% 更低的延时
更快的读取速度,GB/s
19.1
16.7
测试中的平均数值
更快的写入速度,GB/s
14.8
11.8
测试中的平均数值
规格
完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3000C15-4GTZB 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
27
19
读取速度,GB/s
16.7
19.1
写入速度,GB/s
11.8
14.8
内存带宽,mbps
21300
17000
Other
描述
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2756
2994
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
G Skill Intl F4-3000C15-4GTZB 4GB RAM的比较
SK Hynix HMA851S6CJR6N-XN 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3000C15-4GTZB 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMK32GX4M4B3733C17 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Corsair CMD16GX4M2B3466C16 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Corsair CMH16GX4M2D3600C18 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Kingston KHX2666C15D4/4G 4GB
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-2933C14-16GFX 16GB
Kingston 99U5428-040.A00LF 4GB
A-DATA Technology DDR4 3000 2OZ 8GB
Samsung M391B5673EH1-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N
Crucial Technology CT102464BF160B-16F 8GB
MemxPro Inc. D4S8GHIOFFC 8GB
Samsung M393B2G70BH0-CK0 16GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT16G4DFD832A.C16FN 16GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-2800C15-16GRKD 16GB
报告一个错误
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Bug description
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