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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C16-8GTZSK 8GB
比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs G Skill Intl F4-3200C16-8GTZSK 8GB
总分
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
总分
G Skill Intl F4-3200C16-8GTZSK 8GB
差异
规格
评论
差异
需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
低于PassMark测试中的延时,ns
27
32
左右 16% 更低的延时
更高的内存带宽,mbps
21300
17000
左右 1.25% 更高的带宽
需要考虑的原因
G Skill Intl F4-3200C16-8GTZSK 8GB
报告一个错误
更快的读取速度,GB/s
17.4
16.7
测试中的平均数值
更快的写入速度,GB/s
14.4
11.8
测试中的平均数值
规格
完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C16-8GTZSK 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
27
32
读取速度,GB/s
16.7
17.4
写入速度,GB/s
11.8
14.4
内存带宽,mbps
21300
17000
Other
描述
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2756
3340
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
G Skill Intl F4-3200C16-8GTZSK 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B2G70BH0-YK0 16GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Corsair CM4X16GE2666C16K4 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Samsung M378A1G43EB1-CPB 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston XRMWRN-HYA 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C19-16GSXF 16GB
Samsung M471B1G73BH0-YK0 8GB
Mushkin 99[2/7/4]190F 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology 78.C1GQ5.C7C0B 8GB
Hexon Technology Pte Ltd HEXON 1GB
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4SFS632A 8GB
Samsung M393B1K70QB0-CK0 8GB
Super Talent F21UB8GS 8GB
Elpida EBJ41UF8BDU5-GN-F 4GB
G Skill Intl F4-3600C17-16GTZ 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston 9905713-008.A00G 4GB
报告一个错误
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Bug description
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