Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs G Skill Intl F4-4000C18-32GTZN 32GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

G Skill Intl F4-4000C18-32GTZN 32GB

G Skill Intl F4-4000C18-32GTZN 32GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时

G Skill Intl F4-4000C18-32GTZN 32GB

需要考虑的原因
G Skill Intl F4-4000C18-32GTZN 32GB

报告一个错误

更快的读取速度，GB/s

20.6 16.7

测试中的平均数值
更快的写入速度，GB/s

18.8 11.8

测试中的平均数值

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-4000C18-32GTZN 32GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

16.7 20.6
写入速度，GB/s

11.8 18.8
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2756 4112

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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AMD R538G1601U2S 8GB

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Nanya Technology NT2GC64B8HC0NF-CG 2GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMR128GX4M8Z2933C16 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMT32GX4M4K3600C16 8GB

Corsair CMT32GX4M4K3600C16 8GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB

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Kingston 9965604-001.D00G 16GB

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Kingston 99U5474-010.A00LF 2GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB