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PNY Electronics 64C0MHHHJ-HS 4GB
Nanya Technology NT2GC64B8HC0NF-CG 2GB

PNY Electronics 64C0MHHHJ-HS 4GB vs Nanya Technology NT2GC64B8HC0NF-CG 2GB

总分
star star star star star
PNY Electronics 64C0MHHHJ-HS 4GB

PNY Electronics 64C0MHHHJ-HS 4GB

总分
star star star star star
Nanya Technology NT2GC64B8HC0NF-CG 2GB

Nanya Technology NT2GC64B8HC0NF-CG 2GB

差异 规格 评论

差异

PNY Electronics 64C0MHHHJ-HS 4GB 需要考虑的原因
PNY Electronics 64C0MHHHJ-HS 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 48
    左右 46% 更低的延时
  • 更快的读取速度，GB/s
    13.7 left arrow 11.6
    测试中的平均数值
Nanya Technology NT2GC64B8HC0NF-CG 2GB 需要考虑的原因
Nanya Technology NT2GC64B8HC0NF-CG 2GB
报告一个错误

规格

完整的技术规格清单
PNY Electronics 64C0MHHHJ-HS 4GB
Nanya Technology NT2GC64B8HC0NF-CG 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    26 left arrow 48
  • 读取速度，GB/s
    13.7 left arrow 11.6
  • 写入速度，GB/s
    8.3 left arrow 8.3
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2270 left arrow 1804

PNY Electronics 64C0MHHHJ-HS 4GB RAM的比较

A-DATA Technology EL63I1C1624ZV 4GB
G Skill Intl F4-3200C16-8GTRS 8GB

Nanya Technology NT2GC64B8HC0NF-CG 2GB RAM的比较

Samsung M471B5773DH0-CK0 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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