PNY Electronics 64C0MHHHJ-HS 4GB vs Nanya Technology NT2GC64B8HC0NF-CG 2GB

Gesamtnote

PNY Electronics 64C0MHHHJ-HS 4GB

PNY Electronics 64C0MHHHJ-HS 4GB

Gesamtnote

Nanya Technology NT2GC64B8HC0NF-CG 2GB

Nanya Technology NT2GC64B8HC0NF-CG 2GB

Unterschiede Spezifikationen Kommentare

Unterschiede

PNY Electronics 64C0MHHHJ-HS 4GB

Gründe für die Berücksichtigung
PNY Electronics 64C0MHHHJ-HS 4GB

Einen Fehler melden

Unterhalb der Latenzzeit in den PassMark-Tests, ns

26 48

Rund um 46% geringere Latenzzeit
Schnellere Lesegeschwindigkeit, GB/s

13.7 11.6

Durchschnittswert bei den Tests

Nanya Technology NT2GC64B8HC0NF-CG 2GB

Gründe für die Berücksichtigung
Nanya Technology NT2GC64B8HC0NF-CG 2GB

Einen Fehler melden

Spezifikationen

Vollständige Liste der technischen Spezifikationen

PNY Electronics 64C0MHHHJ-HS 4GB

Nanya Technology NT2GC64B8HC0NF-CG 2GB

Wichtigste Merkmale

Speicherart

DDR3 DDR3
Latenzzeit in PassMark, ns

26 48
Lesegeschwindigkeit, GB/s

13.7 11.6
Schreibgeschwindigkeit, GB/s

8.3 8.3
Speicherbandbreite, mbps

10600 10600

Other

Beschreibung

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
Timings / Taktgeschwindigkeit

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
Ranking PassMark (Je mehr, desto besser)

2270 1804

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

Letzte Vergleiche

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

Crucial Technology CT8G4SFRA32A.M8FJ 8GB

Crucial Technology CT8G4SFRA32A.M8FJ 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3600C14-8GTRSB 8GB

G Skill Intl F4-3600C14-8GTRSB 8GB

PNY Electronics 64C0MHHHJ-HS 4GB

PNY Electronics 64C0MHHHJ-HS 4GB

Nanya Technology NT2GC64B8HC0NF-CG 2GB

Nanya Technology NT2GC64B8HC0NF-CG 2GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Crucial Technology CT16G4SFDFD4A.M16FH 16GB

Crucial Technology CT16G4SFDFD4A.M16FH 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

G Skill Intl F4-3600C18-8GTZR 8GB

G Skill Intl F4-3600C18-8GTZR 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-3200C16-4GTZ 4GB

G Skill Intl F4-3200C16-4GTZ 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Wilk Elektronik S.A. GR3200D464L22S/16G 16GB

Wilk Elektronik S.A. GR3200D464L22S/16G 16GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Crucial Technology CT8G4DFS8266.K8FB 8GB

Crucial Technology CT8G4DFS8266.K8FB 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

G Skill Intl F4-2400C15-16GIS 16GB

G Skill Intl F4-2400C15-16GIS 16GB