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PNY Electronics 64C0MHHHJ-HS 4GB
Nanya Technology NT2GC64B8HC0NF-CG 2GB

PNY Electronics 64C0MHHHJ-HS 4GB vs Nanya Technology NT2GC64B8HC0NF-CG 2GB

Note globale
star star star star star
PNY Electronics 64C0MHHHJ-HS 4GB

PNY Electronics 64C0MHHHJ-HS 4GB

Note globale
star star star star star
Nanya Technology NT2GC64B8HC0NF-CG 2GB

Nanya Technology NT2GC64B8HC0NF-CG 2GB

Différences Spécifications Commentaires

Différences

PNY Electronics 64C0MHHHJ-HS 4GB Raisons de considérer
PNY Electronics 64C0MHHHJ-HS 4GB
Signaler un bogue
  • En dessous de la latence dans les tests PassMark, ns
    26 left arrow 48
    Autour de 46% latence réduite
  • Vitesse de lecture plus rapide, GB/s
    13.7 left arrow 11.6
    Valeur moyenne dans les tests
Nanya Technology NT2GC64B8HC0NF-CG 2GB Raisons de considérer
Nanya Technology NT2GC64B8HC0NF-CG 2GB
Signaler un bogue

Spécifications

Liste complète des spécifications techniques
PNY Electronics 64C0MHHHJ-HS 4GB
Nanya Technology NT2GC64B8HC0NF-CG 2GB
Principales caractéristiques
  • Type de mémoire
    DDR3 left arrow DDR3
  • Latence dans PassMark, ns
    26 left arrow 48
  • Vitesse de lecture, GB/s
    13.7 left arrow 11.6
  • Vitesse d'écriture, GB/s
    8.3 left arrow 8.3
  • Largeur de bande de la mémoire, mbps
    10600 left arrow 10600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • Timings / Vitesse d'horloge
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Classement PassMark (Plus il y en a, mieux c'est)
    2270 left arrow 1804

PNY Electronics 64C0MHHHJ-HS 4GB Comparaison des RAM

A-DATA Technology EL63I1C1624ZV 4GB
G Skill Intl F4-3200C16-8GTRS 8GB

Nanya Technology NT2GC64B8HC0NF-CG 2GB Comparaison des RAM

Samsung M471B5773DH0-CK0 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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