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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston CBD26D4U9D8ME-16 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Kingston CBD26D4U9D8ME-16 16GB

总分
star star star star star
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分
star star star star star
Kingston CBD26D4U9D8ME-16 16GB

Kingston CBD26D4U9D8ME-16 16GB

差异 规格 评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB 需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 30
    左右 10% 更低的延时
Kingston CBD26D4U9D8ME-16 16GB 需要考虑的原因
Kingston CBD26D4U9D8ME-16 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.5 left arrow 16.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.8 left arrow 11.8
    测试中的平均数值

规格

完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston CBD26D4U9D8ME-16 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 30
  • 读取速度，GB/s
    16.7 left arrow 17.5
  • 写入速度，GB/s
    11.8 left arrow 14.8
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2756 left arrow 3575

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较

Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB

Kingston CBD26D4U9D8ME-16 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston CBD26D4U9D8ME-16 16GB
Kingston CBD26D4U9D8ME-16 16GB
内存RAM
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Kingston 9905458-017.A01LF 4GB
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Kingston XW21KG-HYD-NX 8GB
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Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
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Kingston K821PJ-MIH 16GB
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SK Hynix HMT41GS6AFR8A-PB 8GB
SK Hynix HMT41GS6AFR8A-PB 8GB
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Samsung M378A1K43CB2-CTD 8GB
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G Skill Intl F4-3600C19-8GVSB 8GB
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Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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G Skill Intl F4-3600C18-8GTRG 8GB
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Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3000C16-16GTRG 16GB
G Skill Intl F4-3000C16-16GTRG 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMH16GX4M2Z3200C16 8GB
Corsair CMH16GX4M2Z3200C16 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
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Corsair CMK16GX4M1E3200C16 16GB
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SK Hynix HYMP164U64CP6-Y5 512MB
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Crucial Technology CB8GS2400.C8D 8GB
内存RAM
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Samsung M393B2G70BH0-CH9 16GB
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内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
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Kingston 9905711-035.A00G 8GB
内存RAM
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Samsung M471B5273CH0-CH9 4GB
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Kingston 9965589-008.D01G 8GB
内存RAM
Corsair CML8GX3M2A1866C9 4GB
Corsair CML8GX3M2A1866C9 4GB
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AMD R748G2400U2S 8GB
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