Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Kingston HP26D4S9S1ME-4 4GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

Kingston HP26D4S9S1ME-4 4GB

Kingston HP26D4S9S1ME-4 4GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 99

左右 73% 更低的延时
更快的读取速度，GB/s

16.7 14.4

测试中的平均数值
更快的写入速度，GB/s

11.8 6.4

测试中的平均数值

Kingston HP26D4S9S1ME-4 4GB

需要考虑的原因
Kingston HP26D4S9S1ME-4 4GB

报告一个错误

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston HP26D4S9S1ME-4 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 99
读取速度，GB/s

16.7 14.4
写入速度，GB/s

11.8 6.4
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2756 1386

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-2133C15-4GRB 4GB

G Skill Intl F4-2133C15-4GRB 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-3600C16-16GTZRC 16GB

G Skill Intl F4-3600C16-16GTZRC 16GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

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Corsair CM4B16G1L3200K18K2 16GB

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SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Kingston KHX3200C16D4/8GX 8GB

Kingston KHX3200C16D4/8GX 8GB